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STC12IE90HV Emitter Switched Bipolar Transistor

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Description

www.DataSheet4U.com STC12IE90HV Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω Preliminary Data General .
The STC12IE90HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

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Features

* VCS(ON) 1V
* IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time
* 1 TO247-4L HV 23 4

STC12IE90HV Distributors

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