STC12IE90HV Datasheet (ST Microelectronics) - Emitter Switched Bipolar Transistor

STC12IE90HV, Emitter Switched Bipolar Transistor

The STC12IE90HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.

It is designed for use in Gate Driven based topologies.

Order codes Part Number STC12IE90HV Marking C12IE90HV Package TO247-4L HV Packaging Tube January

STC12IE90HV Features

* VCS(ON) 1V

* IC 12A RCS(ON) 0.083 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time

* 1 TO247-4L HV 23 4