STD4N62K3 Datasheet - ST Microelectronics

STD4N62K3 Power MOSFET

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and hig.

STD4N62K3 Features

* Type STD4N62K3 STU4N62K3

* VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DP

STD4N62K3_STMicroelectronics.pdf