STD7NK40Z-1, STD7NK40Z Datasheet - ST Microelectronics

STD7NK40Z-1 N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP7NK40Z STP7NK40ZFP STD7NK40Z STD7NK40Z-1 s s s s s s STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 VDSS 400 400 400 400 V V V V RDS(on) <1Ω <1Ω <1Ω <1Ω ID 5.4 A 5.4 A 5.4 A 5.4 A Pw 70 W 25 W 70 W 70 W 3 1 2 TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-22.

STD7NK40Z-1 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STD7NK40Z_STMicroelectronics.pdf