STD7NM80

N-CHANNEL MOSFET

ST Microelectronics

STD7NM80 Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD7NM80 800 V 1.05 Ω

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications ID 6.5 A

* Switching applications G(1) Description S(3) This N-channel Power

STD7NM80 General Description

S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process AM01475v1_noZen with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanch.

STD7NM80 Datasheet (630.05 KB)