STQ3NK50ZR-AP Datasheet - ST Microelectronics

STQ3NK50ZR-AP N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme opyimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements S.

STQ3NK50ZR-AP Features

* TYPE STQ3NK50ZR-AP STD3NK50Z STD3NK50Z-1 s s s s s s Figure 1: Package RDS(on) 3.5 Ω 3.5 Ω 3.5 Ω ID 0.5 A 2.3 A 2.3 A Pw 3W 45 W 40 W VDSS 500 V 500 V 500 V 3 1 TYPICAL RDS(on) = 3.0 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY) 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE

STQ3NK50ZR-AP_STMicroelectronics.pdf