STQ1NK60ZR Datasheet (ST Microelectronics)

STQ1NK60ZR, N-CHANNEL MOSFET

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

In addition to a significant reduction in onresistance, this device is designed to ensure a high

STQ1NK60ZR Features

* 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized