STQ1HNK60R Datasheet - STMicroelectronics

STQ1HNK60R N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements.

STQ1HNK60R Features

* TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1 TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW

STQ1HNK60R_STMicroelectronics.pdf