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STQ2HNK60ZR-AP

N-channel Power MOSFET

STQ2HNK60ZR-AP Features

* Order codes VDS STQ2HNK60ZR-AP 600 V

* 100% avalanche tested

* Gate charge minimized

* Very low intrinsic capacitance

* Zener-protected RDS(on) max. 4.8 Ω ID 500 mA Applications

* Switching applications Description This high-voltage device is a Zener-

STQ2HNK60ZR-AP General Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capa.

STQ2HNK60ZR-AP Datasheet (291.53 KB)

Preview of STQ2HNK60ZR-AP PDF

Datasheet Details

Part number:

STQ2HNK60ZR-AP

Manufacturer:

STMicroelectronics ↗

File Size:

291.53 KB

Description:

N-channel power mosfet.
STQ2HNK60ZR-AP Datasheet N-channel 600 V, 3.5 Ω typ., 500 mA SuperMESH Power MOSFET in a TO-92 package 3 2 1 TO-92 ammopack D(2) G(1) S(3) AM01476.

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TAGS

STQ2HNK60ZR-AP N-channel Power MOSFET STMicroelectronics

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