STQ2LN60K3-AP

N-channel Power MOSFET

STMicroelectronics

STQ2LN60K3-AP Features

* Order code VDS STQ2LN60K3-AP 600 V RDS(on) max 4.5 Ω ID PTOT 0.6 A 2.5 W 2 1 TO-92 ammopack 3 Figure 1: Internal schematic diagram D(2) G(1)

* 100% avalanche tested

* Extremely high dv/dt capability

* Very low intrinsic capacitance

* Improved diode reverse recovery characte

STQ2LN60K3-AP General Description

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the.

STQ2LN60K3-AP Datasheet (458.33 KB)