* Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V
* Extremely high dv/dt capability
* 100% avalanche tested
* Gate charge minimized Applications
* Switching applications RDS(on) max. 8.5 Ω ID 0.4 A Package SOT-223 TO-92 Description G(1) These high-voltage devices
STQ1HNK60R-AP Datasheet (466.35 KB)
STQ1HNK60R-AP
466.35 KB
N-channel mosfet.
STN1HNK60, STQ1HNK60R-AP
Datasheet
N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs in a SOT-223 and TO-92 packages
4 1 23
SOT-223
3 2 1
T.
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