STQ1HNC60 Datasheet - ST Microelectronics

STQ1HNC60, N-CHANNEL MOSFET

www.DataSheet4U.com N-CHANNEL 600V - 7Ω - 0.4A TO-92 PowerMesh™II MOSFET TYPE STQ1HNC60 s s s s s STQ1HNC60 PRELIMINARY DATA VDSS 600 V RDS(on) <8.
Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performanc.

Applications

* s SWITCH MODE LOW POWER SUPPIES (SMPS) s CFL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C

STQ1HNC60_STMicroelectronics.pdf