STQ1HN60K3-AP Datasheet - STMicroelectronics

STQ1HN60K3-AP N-CHANNEL MOSFET

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for .

STQ1HN60K3-AP Features

* Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitance

* Improved diode reverse recovery characteristics

* Zener-prote

STQ1HN60K3-AP-STMicroelectronics.pdf