* Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge minimized
* Very low intrinsic capacitance
* Improved diode reverse recovery characteristics
* Zener-prote
STQ1HN60K3-AP Datasheet (636.36 KB)
STQ1HN60K3-AP
636.36 KB
N-channel mosfet.
STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet
* production data
3 2 1
TO-92
Figure .
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