STQ1HN60K3-AP Datasheet - STMicroelectronics

STQ1HN60K3-AP, N-CHANNEL MOSFET

STQ1HN60K3-AP N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package Datasheet * production data 3 2 1 TO-92 Figure .
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertic.

Features

* Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge minimized
* Very low intrinsic capacitance
* Improved diode reverse recovery characteristics
* Zener-prote

STQ1HN60K3-AP-STMicroelectronics.pdf