STQ1HN60K3-AP - N-CHANNEL MOSFET

STMicroelectronics

STQ1HN60K3-AP Datasheet Preview — Preview of STQ1HN60K3-AP PDF

Datasheet Details

Part number	STQ1HN60K3-AP
Manufacturer	STMicroelectronics ↗
File Size	636.36 KB
Description	N-CHANNEL MOSFET
Datasheet	STQ1HN60K3-AP-STMicroelectronics.pdf

STQ1HN60K3-AP Product details

Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W.
100% avalanche tested.
Extremely high dv/dt capability.
Gate charge minimized.
Very low intrinsic capacitance.
Improved diode reverse recovery characteristics.
Zener-protected.

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Published: Oct 31, 2015 |