STV300NH02L

N-channel Power MOSFET

ST Microelectronics

STV300NH02L Features

* Type STV300NH02L

* VDSS 24V RDS(on) 0.001Ω ID 280A 10 1 RDS(on)

* Qg industry’s benchmark Conduction losses reduced Low profile, very low parasitic inductance Switching losses reduced PowerSO-10 Description This product utilizes the latest advanced design rules of ST’s

STV300NH02L General Description

This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for high current OR-ing application. Internal schematic diagram Applications
* Switching application

* OR-ing

* Specially designed and optimized for high efficienc.

STV300NH02L Datasheet (783.33 KB)