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TP36N06 Datasheet - ST Microelectronics

TP36N06 STP36N06

www.DataSheet4U.com w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A 21 A TYPE VDSS 60 V 60 V STP36N06 STP36N06FI s s s s s s s s TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPE.

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