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GD20PJX65F1S IGBT

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Description

GD20PJX65F1S STARPOWER SEMICONDUCTOR GD20PJX65F1S 650V/20A PIM in one-package General .
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

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Datasheet Specifications

Part number
GD20PJX65F1S
Manufacturer
STARPOWER
File Size
528.11 KB
Datasheet
GD20PJX65F1S-STARPOWER.pdf
Description
IGBT

Features

* Low VCE(sat) Trench IGBT technology
* 6μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated heatsink using DBC technology Typic

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