GD20PJX65L2S - IGBT
GD20PJX65L2S Features
* Low VCE(sat) Trench IGBT technology
* 6μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated heatsink using DBC technology Typic
