GD660HTA75P7H_T1
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using Si3N4 AMB technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
©2025 STARPOWER Semiconductor Ltd. 2/26/2025 1/11 Preliminary
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol VCES VGES ICN IC ICRM
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Implemented Collector Current Collector Current @ TF=110o C Repetitive Peak Collector Current tp =1ms Maximum...
