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GD660HTA75P7H_T1 IGBT

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Description

GD660HTA75P7H_T1 STARPOWER SEMICONDUCTOR GD660HTA75P7H_T1 750V/660A 6 in one-package IGBT Module IGBT General .
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

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Datasheet Specifications

Part number
GD660HTA75P7H_T1
Manufacturer
STARPOWER
File Size
686.10 KB
Datasheet
GD660HTA75P7H_T1-STARPOWER.pdf
Description
IGBT

Features

* Low VCE(sat) Trench IGBT technology
* Low switching losses
* 6μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated copper p

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