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GD660HTA75P7H_T1 Datasheet - STARPOWER

GD660HTA75P7H_T1 IGBT

GD660HTA75P7H_T1 Features

* Low VCE(sat) Trench IGBT technology

* Low switching losses

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper p

GD660HTA75P7H_T1-STARPOWER.pdf

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Datasheet Details

Part number:

GD660HTA75P7H_T1

Manufacturer:

STARPOWER

File Size:

686.10 KB

Description:

Igbt.

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GD660HTA75P7H_T1 GD660HTA75P7H_T1 IGBT STARPOWER

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