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GD660HTA75P7H
STARPOWER
SEMICONDUCTOR
GD660HTA75P7H
750V/660A 6 in one-package
IGBT Module
IGBT
General Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
Low VCE(sat) Trench IGBT technology Low switching losses 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper pinfin baseplate using Si3N4 AMB technology
Typical Applications
Automotive application Hybrid and electric vehicle Inverter for motor drive
Equivalent Circuit Schematic
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GD660HTA75P7H Datasheet
