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GD660HTA75P6S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching losses.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

📥 Download Datasheet

Datasheet Details

Part number GD660HTA75P6S
Manufacturer STARPOWER
File Size 512.20 KB
Description IGBT
Datasheet download datasheet GD660HTA75P6S Datasheet

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Full PDF Text Transcription

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GD660HTA75P6S STARPOWER SEMICONDUCTOR GD660HTA75P6S 750V/660A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd.
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