Datasheet4U Logo Datasheet4U.com

GD660HTA75P6S Datasheet IGBT

Manufacturer: STARPOWER

Overview: GD660HTA75P6S STARPOWER SEMICONDUCTOR GD660HTA75P6S 750V/660A 6 in.

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching losses.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

GD660HTA75P6S Distributor & Price

Compare GD660HTA75P6S distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.