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GD660HTA75P7H_T - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching losses.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper pinfin baseplate using Si3N4 AMB technology Typical.

📥 Download Datasheet

Datasheet Details

Part number GD660HTA75P7H_T
Manufacturer STARPOWER
File Size 685.47 KB
Description IGBT
Datasheet download datasheet GD660HTA75P7H_T Datasheet

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Full PDF Text Transcription

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GD660HTA75P7H_T STARPOWER SEMICONDUCTOR GD660HTA75P7H_T 750V/660A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using Si3N4 AMB technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic ©2024 STARPOWER Semiconductor Ltd.
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