GD660HTA75P7H_T Datasheet IGBT

Manufacturer: STARPOWER

Overview: GD660HTA75P7H_T STARPOWER SEMICONDUCTOR GD660HTA75P7H_T 750V/660A 6 in one-package IGBT Module IGBT.

Datasheet Details

Part number	GD660HTA75P7H_T
Manufacturer	STARPOWER
File Size	685.47 KB
Description	IGBT
Datasheet	GD660HTA75P7H_T-STARPOWER.pdf

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Key Features

Low VCE(sat) Trench IGBT technology.
Low switching losses.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper pinfin baseplate using Si3N4 AMB technology Typical.

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