100N8F6
603.94kb
N-channel power mosfet. This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting
📁 Related Datasheet
100N8F7 - N-channel Power MOSFET
(STMicroelectronics)
STL100N8F7
Datasheet
N-channel 80 V, 5.2 mΩ typ., 100 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Features
PowerFLAT 5x6
Order code
V D.
100N02 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 100N02
100A, 15V N-CHANNEL POWER TRENCH MOSFET
Power MOSFET
DESCRIPTION
The UTC 100N02 is an N-channel Power Trench.
100N03 - N-CHANNEL MOSFET
(KIA)
KIA 90A，30V N-CHANNEL MOSFET
SEMICONDUCTORS S
100N03
1.Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology..
100N03 - MOSFET
(GFD)
DESCRIPTION
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet.
100N03L - N-Channel MOSFET
(STMicroelectronics)
STD100N03L-1 STD100N03L
N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET
General features
Type STD100N03L STD100N03L-1
■ ■ ■
Packa.
100N055 - Power MOSFET
(IXYS Corporation)
.DataSheet.co.kr
ADVANCED TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC100N055
VDSS = 55 V ID2.
100N06L - N-Channel MOSFET
(VBsemi)
100N06L-VB
100N06L-VB Datasheet N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.005 at VGS = 10 V 0.013 at VGS = 4.5 V
ID (A.
100N10 - N-Channel PowerTrench MOSFET
(ETC)
100N10
100N10
N-Channel PowerTrench® MOSFET
100V, 75A, 10mΩ
Features
• RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gat.
100N10 - Nch 100V 10A Power MOSFET
(ROHM)
RSD100N10FRA
Nch 100V 10A Power MOSFET
Datasheet
lOutline
VDSS
100V
TO-252
RDS(on)(Max.)
133mΩ
SC-63
ID
±10A
CPT3
PD
20W
.
100N10 - Power MOSFETs
(IXYS)
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK100N10 IXFN150N10
V
I
DSS
D25
100 V 100 A
100 V 15.
