12NM60N Datasheet (STMicroelectronics)

12NM60N, N-Channel MOSFET

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency

12NM60N Features

* www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) ID STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 650V 650V 650V 650V 650V < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω 10A 10A 10A(1) 10A 10A 1. Limited only by maximum temperature allowed

* 100% avalanche tested

* Low input capa