Part number:
150N3LLH6
Manufacturer:
File Size:
921.42 KB
Description:
N-channel power mosfet.
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1.
Internal schematic diagram $ 4!" OR ' Table 1
150N3LLH6 Features
* Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6 VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate drive power losses Application
* Swit
150N3LLH6-STMicroelectronics.pdf
Datasheet Details
150N3LLH6
921.42 KB
N-channel power mosfet.
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