150N3LLH6 Datasheet - STMicroelectronics

150N3LLH6 N-channel Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!"OR ' Table 1.

150N3LLH6 Features

* Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6 VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses Application

* Swit

150N3LLH6-STMicroelectronics.pdf