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160N3LL N-channel MOSFET

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Description

STP160N3LL N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic.
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

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Features

* Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

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