160NS3LL
0.97MB
N-channel mosfet. This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. G(4) S(1, 2, 3) 12
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160N3LL - N-channel MOSFET
(STMicroelectronics)
STP160N3LL
N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic.
160N4F7 - N-Channel Power MOSFET
(STMicroelectronics)
STL160N4F7
Datasheet
N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Features
Order code
V DS
RDS(on) max
.
160N60UFD - Ultrafast IGBT
(Fairchild Semiconductor)
SGL160N60UFD
SGL160N60UFD
Ultrafast IGBT
IGBT
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Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low.
160N75F3 - N-channel MOSFET
(STMicroelectronics)
STB160N75F3 STP160N75F3 - STW160N75F3
N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
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160NDD - Diode-Diode
(Naina Semiconductor)
Naina Semiconductor emiconductor Ltd.
Diode – Diode Module
Features
• • • • Improved glass passivation for high reliability Exceptional stability at h.
160NTD - Thyristor-Diode
(Naina Semiconductor)
Naina Semiconductor emiconductor Ltd.
Thyristor – Diode Module
Features
• • • • Improved glass passivation for high reliability Exceptional stability .
160NTT - Thyristor-Thyristor
(Naina Semiconductor)
Naina Semiconductor emiconductor Ltd.
Thyristor – Thyristor Module
Features
• • • • Improved glass passivation for high reliability Exceptional stabil.
1600EXD25 - ALLOY-FREE RECTIFIER
(Toshiba Semiconductor)
.
1600FXD25 - ALLOY-FREE RECTIFIER
(Toshiba Semiconductor)
.
16010ALZ - N-Channel MOSFET
(VBsemi)
16010ALZ-VB
16010ALZ-VB Datasheet
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.100 at VGS = 10 V 100
0.120 a.
