160N4F7

N-Channel Power MOSFET

STMicroelectronics

160N4F7 Features

* Order code V DS RDS(on) max STL160N4F7 40 V 2.5 mΩ

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 120 A D(5, 6, 7, 8) 8 76 5 Applications

* Switching a

160N4F7 General Description

S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status ST.

160N4F7 Datasheet (856.38 KB)