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4N150 Datasheet - STMicroelectronics

4N150 N-CHANNEL MOSFET

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) pe.

4N150 Features

* Type VDSS RDS(on) max ID Pw STFW4N150 1500 V

4N150-STMicroelectronics.pdf

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TAGS

4N150 4N150 N-CHANNEL MOSFET STMicroelectronics

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