AM83135-001 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM83135-001 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 10:1 VSWR CAPA.
The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.

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Datasheet Specifications

Part number: AM83135-001
Manufacturer: STMicroelectronics ↗
File Size: 78.97 KB
Datasheet: AM83135-001_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* . . . REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 1.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed O RDER CODE AM83135-001 BRANDING

AM83135-001 Distributors

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AM83135-001 MICROWAVE TRANSISTORS STMicroelectronics

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