AM83135-050 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR.
The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

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Datasheet Specifications

Part number: AM83135-050
Manufacturer: STMicroelectronics ↗
File Size: 93.55 KB
Datasheet: AM83135-050_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 5.2 dB GAIN .310 x .310 2LF L (S064) hermetically sealed O RDER CODE AM83135-0

AM83135-050 Distributors

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AM83135-050 MICROWAVE TRANSISTORS STMicroelectronics

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