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AM83135-050 RF & MICROWAVE TRANSISTORS

AM83135-050 Description

AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR.
The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

AM83135-050 Applications

* . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 5.2 dB GAIN .310 x .310 2LF L (S064) hermetically sealed O RDER CODE AM83135-0

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MICROWAVE TRANSISTORS STMicroelectronics
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