B10NK60Z Datasheet (STMicroelectronics)

B10NK60Z, N-CHANNEL Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements

STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH™ Power MOSFET R DS(on) < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35 W 156 W TYPE STB10NK60Z STB10NK60Z-1 STH10NK60ZFI STP10NK60Z STP10NK60ZFP STW10NK60Z s s s s s s VDSS 600 600 600 600 600 600 V V V V V V 3 2 1 1 2 3 TO-220 ISOWATT218 TO-220FP TYPICAL RDS(on) = 0.65 Ω EXTRE

B10NK60Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag