BUL49D - NPN Transistor
The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.
The devices are designed for use in electronic transformer for halogen lamps.
3 2 1 TO-220 3 2 1 TO-220FP 3 1 D2PAK 123 I2PAK Figure 1.
Internal schematic dia
BUL49D Features
* High voltage capability
* Low spread of dynamic parameters
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
* High ruggedness Applications
* Electronic transformers for halogen lamps
* Flyback and forward single transistor low power convert
