* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL49A
Seme LAB
16.37 KB
Npn transistor.
BUL49A MECHANICAL DATA Dimensions in mm 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAG.
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