* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL47A
Seme LAB
46.77 KB
Advanced distributed base design high voltage high speed npn silicon power transistor.
BUL47A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36.
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