GWA40MS120DF4AG Datasheet - STMicroelectronics

GWA40MS120DF4AG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outstanding short-circuit capability at high bus voltag.

GWA40MS120DF4AG Features

* AEC-Q101 qualified

* 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V, TJ (start) = 175 °C

* VCE(sat) = 1.95 V (typ.) @ IC = 40 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance Appli

GWA40MS120DF4AG Datasheet (335.84 KB)