GWA75H65DRFB2AG Datasheet - STMicroelectronics

Automotive-grade trench gate field-stop IGBT

GWA75H65DRFB2AG Features

* TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A

* Co-packed with high ruggedness rectifier diode

* Minimized tail current

* Tight paramet

GWA75H65DRFB2AG General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifi.

GWA75H65DRFB2AG Datasheet (640.40 KB)