GWA75H65DRFB2AG Datasheet (STMicroelectronics) - Automotive-grade trench gate field-stop IGBT

GWA75H65DRFB2AG, Automotive-grade trench gate field-stop IGBT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performances are optimized both in conduction and switching energies for hard switching application.

In this configuration, it has been co-packed with a high ruggedness rectifi

GWA75H65DRFB2AG Features

* TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A

* Co-packed with high ruggedness rectifier diode

* Minimized tail current

* Tight paramet