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GWA75H65DRFB2AG - Automotive-grade trench gate field-stop IGBT

GWA75H65DRFB2AG Description

GWA75H65DRFB2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package .
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

GWA75H65DRFB2AG Features

* TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T
* AEC-Q101 qualified
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.6 V (typ. ) @ IC = 75 A
* Co-packed with high ruggedness rectifier diode
* Minimized tail current
* Tight paramet

GWA75H65DRFB2AG Applications

* DC/DC converter for EV/HEV

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Automotive-grade trench gate field-stop IGBT STMicroelectronics
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