trench Datasheet | Specifications & PDF Download

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel

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CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Silicon FS Trench IGBT CRG40T120AK5HDZ General Description： Using owner proprietary trench design and advanced Field Stop (FS) technology, offering s

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF

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STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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N-Channel Trench Power MOSFET General Description The 48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF

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GFMK3045 Trench SCHOTTKY Diodes ■ Features ● ， Low VF，low IR ● ， Low Power loss, High efficiency ● （ESD>=30KV） :IEC-61000-4-2， High ESD（ESD>=30

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P-Channel Trench Power MOSFET General Description The CS4459 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operati

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 28 June 2024 Product data sheet 1. General Desc

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ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Hermetic TO-258 Packaging • 200°C

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