FDS6675BZ P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDS6675BZ P-Channel PowerTrench® MOSFET FDS6675BZ P-Channel PowerTrench® MOSFET -30V, -11A, 13mΩ March 2009 tm General .
Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimi.

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Datasheet Specifications

Part number: FDS6675BZ
Manufacturer: Fairchild Semiconductor
File Size: 396.32 KB
Datasheet: FDS6675BZ-FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

Applications

* common in Notebook Computers and Portable Battery Packs.
* Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
* Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
* Extended VGS range (-25V) for battery applications
* HBM ESD protection level of 5.4 KV typical (note 3)

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FDS6675BZ P-Channel PowerTrench MOSFET Fairchild Semiconductor

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