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NCEP023N10LL

N-Channel Super Trench II Power MOSFET

NCEP023N10LL Features

* VDS =100V,ID =300A RDS(ON)=1.7mΩ , typical@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TOLL Schematic Diagram Package Marking and Ordering In

NCEP023N10LL General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP023N10LL Datasheet (405.43 KB)

Preview of NCEP023N10LL PDF

Datasheet Details

Part number:

NCEP023N10LL

Manufacturer:

NCE Power Semiconductor

File Size:

405.43 KB

Description:

N-channel super trench ii power mosfet.

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NCEP023N10LL N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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