NCEP023N10LL - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number: NCEP023N10LL
Manufacturer: NCE Power Semiconductor
File Size: 405.43 KB
Datasheet: NCEP023N10LL-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

NCEP023N10LL Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =300A RDS(ON)=1.7mΩ , typical@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TOLL Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP023N10LL NCEP023N10LL TOLL - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Drai.

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N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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