NCEP023N10T Datasheet - NCE Power Semiconductor

NCEP023N10T, N-Channel Power MOSFET

NCEP023N10T NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Details

Part number:

NCEP023N10T

Manufacturer:

NCE Power Semiconductor

File Size:

547.00 KB

Description:

N-Channel Power MOSFET

Features

* VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material

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