NCEP023N10T - N-Channel Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number: NCEP023N10T
Manufacturer: NCE Power Semiconductor
File Size: 547.00 KB
Datasheet: NCEP023N10T-NCEPowerSemiconductor.pdf
Description: N-Channel Power MOSFET

NCEP023N10T Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N10T NCEP023N10T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol.

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Published: Sep 8, 2024 |