NCEP023N10T Datasheet - NCE Power Semiconductor

N-Channel Power MOSFET

NCEP023N10T Features

* VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering

NCEP023N10T General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP023N10T Datasheet (547.00 KB)

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Datasheet Details

Part number:

NCEP023N10T

Manufacturer:

NCE Power Semiconductor

File Size:

547.00 KB

Description:

N-channel power mosfet.

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NCEP023N10T N-Channel Power MOSFET NCE Power Semiconductor

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NCEP023N10T Features

NCEP023N10T General Description

Datasheet Details

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Description:

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