NCEP020N30QU - N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Datasheet Details

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =30V,ID =70A RDS(ON)=1.75mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application.
DC/DC Converter.
Ideal for high-frequency switching and synchronous rectification.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature y.
Pb-free lead plating l 100% UIS TESTED! On100% ΔVds TESTED! DFN 3.3X3.3.

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Published: Jan 22, 2025 |