NCEP065N12AGU Datasheet - NCE Power Semiconductor

N-Channel Super Trench II Power MOSFET

NCEP065N12AGU Features

* VDS =120V,ID =90A RDS(ON)=5.6mΩ , typical @ VGS=10V RDS(ON)=6.9mΩ , typical @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150°C operating temperature

* Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use ti

NCEP065N12AGU General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP065N12AGU Datasheet (379.55 KB)

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Part number:

NCEP065N12AGU

Manufacturer:

NCE Power Semiconductor

File Size:

379.55 KB

Description:

N-channel super trench ii power mosfet.

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NCEP065N12AGU N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEP065N12AGU Features

NCEP065N12AGU General Description

Datasheet Details

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