NCEP065N12AGU N-Channel Super Trench II Power MOSFET

NCE Power Semiconductor

Description

NCEP065N12AGU NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NCEP065N12AGU
Manufacturer: NCE Power Semiconductor
File Size: 379.55 KB
Datasheet: NCEP065N12AGU-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =120V,ID =90A RDS(ON)=5.6mΩ , typical @ VGS=10V RDS(ON)=6.9mΩ , typical @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150°C operating temperature
* Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use ti

Applications

* that require extremely high le

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NCEP065N12AGU N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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