NCEP065N12AGU Datasheet - NCE Power Semiconductor

NCEP065N12AGU N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP065N12AGU Features

* VDS =120V,ID =90A RDS(ON)=5.6mΩ , typical @ VGS=10V RDS(ON)=6.9mΩ , typical @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150°C operating temperature

* Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use ti

NCEP065N12AGU-NCEPowerSemiconductor.pdf