NCEP0109AR - N-Channel Super Trench Power MOSFET

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	NCEP0109AR
Manufacturer	NCE Power Semiconductor
File Size	296.70 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0109AR Datasheet
Additional preview pages of the NCEP0109AR datasheet.

Product details

Description

The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.General

Features

VDS = 100V,ID = 9A RDS(ON) < 27mΩ @ VGS=10V (Typ:21mΩ) RDS(ON) < 37mΩ @ VGS=4.5V (Typ:30mΩ).
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Oct 26, 2024 |