NCEP0109AR Datasheet - NCE Power Semiconductor

NCEP0109AR N-Channel Super Trench Power MOSFET

The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi.

NCEP0109AR Features

* VDS = 100V,ID = 9A RDS(ON) < 27mΩ @ VGS=10V (Typ:21mΩ) RDS(ON) < 37mΩ @ VGS=4.5V (Typ:30mΩ)

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* Powe

NCEP0109AR Datasheet (296.70 KB)

NCEP0109AR Datasheet Preview — Preview of NCEP0109AR PDF

Datasheet Details

Part number:

NCEP0109AR

Manufacturer:

NCE Power Semiconductor

File Size:

296.70 KB

Description:

N-channel super trench power mosfet.

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NCEP0109AR N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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