NCEP0109AR - N-Channel Super Trench Power MOSFET
The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency swi
NCEP0109AR Features
* VDS = 100V,ID = 9A RDS(ON) < 27mΩ @ VGS=10V (Typ:21mΩ) RDS(ON) < 37mΩ @ VGS=4.5V (Typ:30mΩ)
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Application
* Powe
