NCEP0140AG Datasheet - NCE Power Semiconductor

NCEP0140AG N-Channel Super Trench Power MOSFET

The NCEP0140AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP0140AG Features

* VDS =100V,ID =40A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Appli

NCEP0140AG-NCEPowerSemiconductor.pdf