NCEP0112AS - N-Channel Super Trench Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCEP0112AS
Manufacturer	NCE Power Semiconductor
File Size	427.87 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0112AS Datasheet
Additional preview pages of the NCEP0112AS datasheet.

The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment.

📁 Similar Datasheet

Other Datasheets by NCE Power Semiconductor

Published: Jun 3, 2018 |