NCEP068N10G N-Channel Super Trench Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com NCEP068N10G NCE N-Channel Super Trench Power MOSFET .
General Features The NCEP068N10G uses Super Trench technology that is. VDS =100V,ID =70A uniquely optimized to provide the most efficient hig.

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Datasheet Specifications

Part number: NCEP068N10G
Manufacturer: NCE Power Semiconductor
File Size: 356.84 KB
Datasheet: NCEP068N10G-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* The NCEP068N10G uses Super Trench technology that is
* VDS =100V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of

Applications

* that require extremely high levels o

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NCEP068N10G N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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