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NCEP068N10G Datasheet - NCE Power Semiconductor

NCEP068N10G - N-Channel Super Trench Power MOSFET

NCEP068N10G Features

* The NCEP068N10G uses Super Trench technology that is

* VDS =100V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of

NCEP068N10G-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCEP068N10G

Manufacturer:

NCE Power Semiconductor

File Size:

356.84 KB

Description:

N-channel super trench power mosfet.

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