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MBQ60T65PES High Speed Fieldstop Trench IGBT

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Description

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General .
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of.

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Datasheet Specifications

Part number
MBQ60T65PES
Manufacturer
MagnaChip
File Size
729.89 KB
Datasheet
MBQ60T65PES-MagnaChip.pdf
Description
High Speed Fieldstop Trench IGBT

Features

* High Speed Switching & Low Power Loss
* VCE(sat) = 1.85V @ IC = 60A
* Eoff = 0.53mJ @ TC = 25°C
* High Input Impedance
* trr = 110ns (typ. ) @diF/dt = 500A/ μs

Applications

* PFC
* UPS
* PV Inverter
* Welder
* IH Cooker TO-247 GCE Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tvjmax Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C Diode

MBQ60T65PES Distributors

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