Description
The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.
Features
- Designed for soft-commutation only.
- Maximum junction temperature: TJ = 175 °C.
- VCE(sat) = 1.5 V (typ. ) @ IC = 50 A.
- Minimized tail current.
- Tight parameter distribution.
- Low thermal resistance.
- Low voltage drop freewheeling co-packaged
diode
Figure 1: Internal schematic diagram C (2)
G (1)
Sc12850_no_tab
E (3).
