M28256 - 256 Kbit 32Kb x8 Parallel EEPROM
The M28256 and M28256-Ware 32K x8 low power Parallel EEPROM fabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology.
Table 1.
Signal Names A0-A14 DQ0-DQ7 W E G VCC VSS Address Input Data Input / Output Write Enable Chip Enable Output Enable Supply Voltage Ground 15 A0-A14
M28256 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PRELIMINARY DATA FAST ACCESS TIME: 90ns at 5V 120ns at 3V SINGLE SUPPLY VOLTAGE: 5V ± 10% for M28256 2.7V to 3.6V for M28256-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte or Page Write Cycle ENHANCED END of WRITE DETECTION: Data Polling Toggle Bit STATUS REGISTER HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLO
M28256 Features
* ction WRITE AAh in Address 5555h WRITE
