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PD54008-E

RF POWER transistor

PD54008-E Features

* Excellent thermal stability

* Common source configuration

* POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V

* New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band

PD54008-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity.

PD54008-E Datasheet (480.65 KB)

Preview of PD54008-E PDF

Datasheet Details

Part number:

PD54008-E

Manufacturer:

STMicroelectronics ↗

File Size:

480.65 KB

Description:

Rf power transistor.

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TAGS

PD54008-E POWER transistor STMicroelectronics

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