PD506BA - N-Channel MOSFET
PD506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 70A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 70 44 160 Avalanche Current IAS 34 Avalanche Energy L = 0.1mH EAS 57 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction
